Electron diffusion length and lifetime in p-type GaN

Light-Induced Increase of Electron Diffusion Length in a p-n Junction Type CH3NH3PbBr3 Perovskite Solar Cell.

High band gap, high open-circuit voltage solar cells with methylammonium lead tribromide (MAPbBr3) perovskite absorbers are of interest for spectral splitting and photoelectrochemical applications, because of their good performance and ease of processing. The physical origin of high performance in these and similar perovskite-based devices remains only partially understood. Using cross-sectiona...

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

p-n diodes with avalanche breakdown Zongyang Hu, Kazuki Nomoto, Bo Song, Mingda Zhu, Meng Qi, Ming Pan, Xiang Gao, Vladimir Protasenko, Debdeep Jena, and Huili Grace Xing School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA IQE RF LLC, Somerset, New Jersey 088...

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Electron lifetime in a Shockley-type metal-organic interface state.

The lifetimes of electrons at the interface between 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) and Ag(111) have been studied by means of time- and angle-resolved two-photon photoemission. We observe a dispersing unoccupied state 0.6 eV above the Fermi level with an effective electron mass of 0.39m{e} at the Gamma[over ] point. The short lifetime of 54 fs is indicative of a large...

Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes